HY3215M Todos los transistores

 

HY3215M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY3215M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 548 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO220
 

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HY3215M Datasheet (PDF)

 ..1. Size:968K  hymexa
 hy3215p hy3215m hy3215b hy3215ps hy3215pm.pdf pdf_icon

HY3215M

HY3215P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 150V/120ARDS(ON)= 12 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsTO-3PS-3L TO-3PM-3SASwitching application

 8.1. Size:1565K  1
 hy3215w.pdf pdf_icon

HY3215M

HY3215WN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/130ARDS(ON)=11.5m(typ.)@VGS =10V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices AvailableS(RoHS Compliant)DGTO-247A-3LApplications Brushless Motor Drive Electric Power SteeringN Channel MOSFETOrdering and Marking InformationPackage CodeWW : T

 9.1. Size:4740K  1
 hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf pdf_icon

HY3215M

HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-

 9.2. Size:4740K  hymexa
 hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf pdf_icon

HY3215M

HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-

MOSTRAR MÁS

Otros transistores... HY3010B , HY3203C2 , HY3208AP , HY3208AM , HY3208AB , HY3208APS , HY3208APM , HY3215P , IRFZ48N , HY3215B , HY3215PS , HY3215PM , HY3312P , HY3312M , HY3312B , HY3312PS , HY3312PM .

History: AON2801 | IPD60R1K5CE | NTMFS4C054N | IXTT1N300P3HV | 2SK066400L | CHM4435AZGP | CES2362

 

 
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