HY3215PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY3215PS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 137 nC
trⓘ - Tiempo de subida: 39 nS
Cossⓘ - Capacitancia de salida: 548 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: TO3P
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HY3215PS Datasheet (PDF)
hy3215p hy3215m hy3215b hy3215ps hy3215pm.pdf
HY3215P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 150V/120ARDS(ON)= 12 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsTO-3PS-3L TO-3PM-3SASwitching application
hy3215w.pdf
HY3215WN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/130ARDS(ON)=11.5m(typ.)@VGS =10V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices AvailableS(RoHS Compliant)DGTO-247A-3LApplications Brushless Motor Drive Electric Power SteeringN Channel MOSFETOrdering and Marking InformationPackage CodeWW : T
hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf
HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-
hy3210p hy3210m hy3210b hy3210ps hy3210pm.pdf
HY3210P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionF eatures 100V/120ARDS(ON)= 6.8 m (typ.) @ VGS=10VS DS100% avalanche testedD GGSD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-
hy3210p hy3210b.pdf
HY3210P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/120ARDS(ON)=6.8m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPackage C
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
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