HY3403B Todos los transistores

 

HY3403B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY3403B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 115 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 469 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: TO263
 

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HY3403B Datasheet (PDF)

 ..1. Size:1093K  hymexa
 hy3403p hy3403b.pdf pdf_icon

HY3403B

HY3403P/B N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/140ARDS(ON)=2.2m(typ.)@VGS = 10VRDS(ON)=2.7m(typ.) @VGS =4.5V 100% avalanche tested SGD Excellent CdV/dt effect decline Lead- Free Device AvailableGDSTO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DCN-Channel MOSFETOrdering and Marking Infor

 8.1. Size:784K  1
 hy3403.pdf pdf_icon

HY3403B

HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m(typ.)@VGS = 10V RDS(ON)= 2.9m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P

 8.2. Size:784K  hymexa
 hy3403d hy3403u hy3403v.pdf pdf_icon

HY3403B

HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m(typ.)@VGS = 10V RDS(ON)= 2.9m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P

 9.1. Size:820K  1
 hy3408.pdf pdf_icon

HY3403B

HY3408P/M/B/PS/PMAbsolute Maximum RatingsSymbol Parameter Rating Unit Common Ratings (TC=25C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25C 140 A Mounted on Large Heat Sink IDM Pulsed Drain Current * TC

MOSTRAR MÁS

Otros transistores... HY3215PS , HY3215PM , HY3312P , HY3312M , HY3312B , HY3312PS , HY3312PM , HY3403P , IRF9640 , HY3503C2 , HY3606P , HY3606B , HY3704P , HY3704B , HY3708P , HY3708M , HY3708B .

History: P261AFEA | CTM02N60 | CSD17577Q3A | NCEP40T13AGU | VS3622DE | SPN10T10 | SE3082G

 

 
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