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HY4008P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY4008P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 345 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 200 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 197 nC
   Tiempo de subida (tr): 18 nS
   Conductancia de drenaje-sustrato (Cd): 1029 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0035 Ohm
   Paquete / Cubierta: TO220

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HY4008P Datasheet (PDF)

 ..1. Size:4866K  hymexa
hy4008p hy4008m hy4008b hy4008ps hy4008pm.pdf

HY4008P HY4008P

HY4008P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin Descriptioneatures F80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10VS D S100% avalanche testedD GG SD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-

 8.1. Size:3615K  hymexa
hy4008.pdf

HY4008P HY4008P

HY4008W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Infor

 8.2. Size:3615K  hymexa
hy4008w hy4008a.pdf

HY4008P HY4008P

HY4008W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Infor

 8.3. Size:671K  hymexa
hy4008b6.pdf

HY4008P HY4008P

HY4008B6N-Channel Enhancement Mode MOSFET Feature Description Pin Description 80V/255ARDS(ON)= 2.6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Pin7 Lead Free and Green Devices Available (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Pin1 Switch application Brushless Motor Drive Pin2,3,5,6,7 N-Channel MOSFET Ordering and Marking Info

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History: NCE01H11 | NCE65N290K

 

 
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History: NCE01H11 | NCE65N290K

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