HY4306B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY4306B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 258 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 230 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 1093 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de HY4306B MOSFET
HY4306B Datasheet (PDF)
hy4306p hy4306b.pdf

HY4306P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.6 m(typ.) @ VGS=10V 100% avalanche testedSD Reliable and Rugged GSD Lead Free and Green Devices AvailableG(RoHS Compliant)TO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and M
hy4306b6.pdf

HY4306B6N-Channel Enhancement Mode MOSFET Feature Description Pin Description 60V/290ARDS(ON)= 1.8m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available Pin 7(RoHS Compliant) Pin1 TO-263-6L Pin4 Pin1 Applications Switch application Brushless Motor Drive Pin2,3,5,6,7 N-Channel MOSFETOrdering and Marking Info
hy4306w hy4306a.pdf

HY4306W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.2 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching applicationG N-Channel MOSFET Power Management for Inverter Systems.SOrdering and Marking Infor
hy4306w hy4306a.pdf

HY4306W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.2 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-247A-3LTO-3P-3LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and Mar
Otros transistores... HY4008B6 , HY4008P , HY4008M , HY4008B , HY4008PS , HY4008PM , HY4306B6 , HY4306P , IRFB4110 , HY4504B6 , HY4504P , HY4504B , HY4504W , HY4504A , HY4903P , HY4903B , HY4903B6 .



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