HYG020N04NA1B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HYG020N04NA1B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 220 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 79 nS
Cossⓘ - Capacitancia de salida: 820 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
Paquete / Cubierta: TO263
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HYG020N04NA1B Datasheet (PDF)
hyg020n04na1p hyg020n04na1b hyg020n04na1pl.pdf

HYG020N04NA1P/B/PLN-Channel Enhancement Mode MOSFETFeature Pin Description 40V/220ARDS(ON)= 1.8 m(typ.) @VGS = 10V 100% Avalanche TestedReliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-263-2LTO-220FB-3LApplications Switching application Li-battery protectionTO-3PM-3LOrdering and Marking InformationN-Channel MOSFET
hyg023n03lr1c2.pdf

HYG023N03LR1C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/125AD D D D D D D D RDS(ON)= 1.5m (typ.) @VGS = 10VRDS(ON)= 2.1m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S S S S S G Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/
hyg025n06ls1c2.pdf

HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B
hyg025n04na1c2.pdf

HYG025N04NA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/190ARDS(ON)= 1.4m(typ.) @VGS = 10VD D D DD D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETOrdering and Marking InformationPac
Otros transistores... HY5204W , HY5204A , HY5208W , HY5208A , HY5608W , HY5608A , HYG018N10NS1B6 , HYG020N04NA1P , 2SK3568 , HYG020N04NA1PL , HYG023N03LR1D , HYG023N03LR1U , HYG023N03LR1V , HYG025N06LS1C2 , HYG025N06LS1P , HYG032N03LR1C1 , HYG035N02KA1C2 .
History: HGN070N12SL | PSMN5R0-100PS | MMQ60R115PTH | IRF540ZSPBF | VBE1638 | AFN08N50T220T | IRFS621
History: HGN070N12SL | PSMN5R0-100PS | MMQ60R115PTH | IRF540ZSPBF | VBE1638 | AFN08N50T220T | IRFS621



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