HYG020N04NA1B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HYG020N04NA1B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 220 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 79 nS

Cossⓘ - Capacitancia de salida: 820 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm

Encapsulados: TO263

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HYG020N04NA1B datasheet

 ..1. Size:1421K  hymexa
hyg020n04na1p hyg020n04na1b hyg020n04na1pl.pdf pdf_icon

HYG020N04NA1B

HYG020N04NA1P/B/PL N-Channel Enhancement Mode MOSFET Feature Pin Description 40V/220A RDS(ON)= 1.8 m (typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-263-2L TO-220FB-3L Applications Switching application Li-battery protection TO-3PM-3L Ordering and Marking Information N-Channel MOSFET

 9.1. Size:793K  1
hyg023n03lr1c2.pdf pdf_icon

HYG020N04NA1B

HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/125A D D D D D D D D RDS(ON)= 1.5m (typ.) @VGS = 10V RDS(ON)= 2.1m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/

 9.2. Size:1497K  1
hyg025n06ls1c2.pdf pdf_icon

HYG020N04NA1B

HYG025N06LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 60V/170A RDS(ON)= 2.1 m (typ.) @ VGS = 10V RDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S (RoHS Compliant) Pin1 PDFN8L 5x6 Applications High Frequency Point-of-Load Synchronous B

 9.3. Size:1254K  1
hyg025n04na1c2.pdf pdf_icon

HYG020N04NA1B

HYG025N04NA1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 40V/190A RDS(ON)= 1.4m (typ.) @VGS = 10V D D D D D D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information Pac

Otros transistores... HY5204W, HY5204A, HY5208W, HY5208A, HY5608W, HY5608A, HYG018N10NS1B6, HYG020N04NA1P, 4435, HYG020N04NA1PL, HYG023N03LR1D, HYG023N03LR1U, HYG023N03LR1V, HYG025N06LS1C2, HYG025N06LS1P, HYG032N03LR1C1, HYG035N02KA1C2