HYG025N06LS1C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HYG025N06LS1C2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 130 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 170 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 34 nS
Cossⓘ - Capacitancia de salida: 1310 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
Paquete / Cubierta: PDFN8L
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HYG025N06LS1C2 Datasheet (PDF)
hyg025n06ls1c2.pdf

HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B
hyg025n06ls1c2.pdf

HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B
hyg025n06ls1p.pdf

HYG025N06LS1PSingle N-Channel Enhancement Mode MOSFETFeature Pin Description 60V/160ARDS(ON)= 2.5 m (typ.) @ VGS = 10VRDS(ON)= 3.7 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available(RoHS Compliant)TO-220FB-3LApplications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application
hyg025n04na1c2.pdf

HYG025N04NA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/190ARDS(ON)= 1.4m(typ.) @VGS = 10VD D D DD D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETOrdering and Marking InformationPac
Otros transistores... HY5608A , HYG018N10NS1B6 , HYG020N04NA1P , HYG020N04NA1B , HYG020N04NA1PL , HYG023N03LR1D , HYG023N03LR1U , HYG023N03LR1V , RFP50N06 , HYG025N06LS1P , HYG032N03LR1C1 , HYG035N02KA1C2 , HYG035N06LS1C2 , HYG045N03LA1C2 , HYG050N08NS1P , HYG050N08NS1B , HYG050N13NS1B6 .
History: DMN3024LSD | P3004BD | SM2215PSQG | QM0008J | FQB27P06TM | PJA3402 | CEP04N7G
History: DMN3024LSD | P3004BD | SM2215PSQG | QM0008J | FQB27P06TM | PJA3402 | CEP04N7G



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