HSBA3004 Todos los transistores

 

HSBA3004 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBA3004
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 46 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 58 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12.2 nS
   Cossⓘ - Capacitancia de salida: 163 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: PRPAK5X6
 

 Búsqueda de reemplazo de HSBA3004 MOSFET

   - Selección ⓘ de transistores por parámetros

 

HSBA3004 Datasheet (PDF)

 ..1. Size:518K  1
hsba3004.pdf pdf_icon

HSBA3004

HSBA3004 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSBA3004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),max 8.5 m and gate charge for most applications. The HSBA3004 meet the RoHS and Green ID 58 A Product requirement, 100% EAS guaranteed with full function reliability approved. 100% EAS Gua

 ..2. Size:518K  huashuo
hsba3004.pdf pdf_icon

HSBA3004

HSBA3004 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSBA3004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),max 8.5 m and gate charge for most applications. The HSBA3004 meet the RoHS and Green ID 58 A Product requirement, 100% EAS guaranteed with full function reliability approved. 100% EAS Gua

 8.1. Size:698K  1
hsba3050.pdf pdf_icon

HSBA3004

HSBA3050 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 3 m Isolated DC/DC Converters in Telecom and Industrial. ID 75 A Features 100% EAS Guaranteed Green Device Available PRPAK5*6 Pin Configuration Super Low Gate Charge Excellent CdV/dt effect

 8.2. Size:395K  1
hsba3014.pdf pdf_icon

HSBA3004

HSBA3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBA3014 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 12 m synchronous buck converter applications. ID 50 A The HSBA3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

Otros transistores... HSP4N65 , HSF4N65 , HSBA0048 , HSBA0139 , HSBA060N10 , HSBA100P03 , HSBA15810C , HSBA20N15S , 5N50 , HSBA3014 , HSBA3031 , HSBA3048 , HSBA3050 , HSBA3052 , HSBA3054 , HSBA3056 , HSBA3058 .

History: HRP45N08K

 

 
Back to Top

 


 
.