HSBA3031 Todos los transistores

 

HSBA3031 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBA3031
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 255 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
   Paquete / Cubierta: PRPAK5X6
     - Selección de transistores por parámetros

 

HSBA3031 Datasheet (PDF)

 ..1. Size:778K  1
hsba3031.pdf pdf_icon

HSBA3031

HSBA3031 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA3031 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.2 m gate charge for most of the synchronous buck converter applications. ID -70 A The HSBA3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 ..2. Size:778K  huashuo
hsba3031.pdf pdf_icon

HSBA3031

HSBA3031 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA3031 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.2 m gate charge for most of the synchronous buck converter applications. ID -70 A The HSBA3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 8.1. Size:698K  1
hsba3050.pdf pdf_icon

HSBA3031

HSBA3050 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 3 m Isolated DC/DC Converters in Telecom and Industrial. ID 75 A Features 100% EAS Guaranteed Green Device Available PRPAK5*6 Pin Configuration Super Low Gate Charge Excellent CdV/dt effect

 8.2. Size:395K  1
hsba3014.pdf pdf_icon

HSBA3031

HSBA3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBA3014 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 12 m synchronous buck converter applications. ID 50 A The HSBA3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

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History: SI1413DH | SIR496DP | IRFR9220 | SFD082N68C2 | AO4914 | WML90R360S | BFC23

 

 
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