HSBA3052 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSBA3052
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 24 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 498 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm
Paquete / Cubierta: PRPAK5X6
Búsqueda de reemplazo de HSBA3052 MOSFET
HSBA3052 Datasheet (PDF)
hsba3052.pdf

HSBA3052 N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSBA3052 is the high cell density Trench V 30 V DSMOSFET, which provide excellent RDSON and gate charge for DC/DC converters application. R 5 m DS(ON),TYPThe HSBA3052 meet the RoHS and Green I 52 A DProduct requirement, 100% EAS guaranteed with full function reliability approved. 100% EA
hsba3052.pdf

HSBA3052 N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSBA3052 is the high cell density Trench V 30 V DSMOSFET, which provide excellent RDSON and gate charge for DC/DC converters application. R 5 m DS(ON),TYPThe HSBA3052 meet the RoHS and Green I 52 A DProduct requirement, 100% EAS guaranteed with full function reliability approved. 100% EA
hsba3050.pdf

HSBA3050 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 3 m Isolated DC/DC Converters in Telecom and Industrial. ID 75 A Features 100% EAS Guaranteed Green Device Available PRPAK5*6 Pin Configuration Super Low Gate Charge Excellent CdV/dt effect
hsba3056.pdf

HSBA3056 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 3.2 m Isolated DC/DC Converters in Telecom and Industrial. ID 73 A Features 100% EAS Guaranteed Green Device Available PRPAK5*6 Pin Configuration Super Low Gate Charge Excellent CdV/dt effe
Otros transistores... HSBA100P03 , HSBA15810C , HSBA20N15S , HSBA3004 , HSBA3014 , HSBA3031 , HSBA3048 , HSBA3050 , IRF740 , HSBA3054 , HSBA3056 , HSBA3058 , HSBA3060 , HSBA3062 , HSBA3094 , HSBA3115 , HSBA4006 .
History: SI7232DN | 2SK1712 | SSD70N04-06D | NP22N055HHE | STB75N20 | SSA47N60S | WST2316A
History: SI7232DN | 2SK1712 | SSD70N04-06D | NP22N055HHE | STB75N20 | SSA47N60S | WST2316A



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