HSBA3062
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSBA3062
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 40
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.3
nS
Cossⓘ - Capacitancia
de salida: 260
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125
Ohm
Paquete / Cubierta: PRPAK3X3
- Selección de transistores por parámetros
HSBA3062
Datasheet (PDF)
..1. Size:691K 1
hsba3062.pdf 
HSBA3062 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 10.5 m Isolated DC/DC Converters in Telecom and Industrial. ID 40 A Features PRPAK3*3 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effe
..2. Size:691K huashuo
hsba3062.pdf
HSBA3062 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 10.5 m Isolated DC/DC Converters in Telecom and Industrial. ID 40 A Features PRPAK3*3 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effe
7.1. Size:734K 1
hsba3060.pdf
HSBA3060 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 8 m Isolated DC/DC Converters in Telecom and Industrial. ID 48 A Features PRPAK5*6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect
7.2. Size:734K huashuo
hsba3060.pdf
HSBA3060 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 8 m Isolated DC/DC Converters in Telecom and Industrial. ID 48 A Features PRPAK5*6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect
8.1. Size:698K 1
hsba3050.pdf
HSBA3050 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 3 m Isolated DC/DC Converters in Telecom and Industrial. ID 75 A Features 100% EAS Guaranteed Green Device Available PRPAK5*6 Pin Configuration Super Low Gate Charge Excellent CdV/dt effect
8.2. Size:395K 1
hsba3014.pdf
HSBA3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBA3014 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 12 m synchronous buck converter applications. ID 50 A The HSBA3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
8.3. Size:945K 1
hsba3048.pdf
HSBA3048 N-Ch 30V Fast Switching MOSFETs General Description Product Summary VDS 30 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 1.3 m Low Gate Charge High Current Capability ID 100 A RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration Power Management in Desktop Computer DC/DC Converters Absolute Maxi
8.4. Size:744K 1
hsba3056.pdf
HSBA3056 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 3.2 m Isolated DC/DC Converters in Telecom and Industrial. ID 73 A Features 100% EAS Guaranteed Green Device Available PRPAK5*6 Pin Configuration Super Low Gate Charge Excellent CdV/dt effe
8.5. Size:755K 1
hsba3058.pdf
HSBA3058 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 6 m Isolated DC/DC Converters in Telecom and Industrial. ID 30 A Features PRPAK5*6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect
8.6. Size:503K 1
hsba3052.pdf
HSBA3052 N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSBA3052 is the high cell density Trench V 30 V DSMOSFET, which provide excellent RDSON and gate charge for DC/DC converters application. R 5 m DS(ON),TYPThe HSBA3052 meet the RoHS and Green I 52 A DProduct requirement, 100% EAS guaranteed with full function reliability approved. 100% EA
8.7. Size:518K 1
hsba3004.pdf
HSBA3004 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSBA3004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),max 8.5 m and gate charge for most applications. The HSBA3004 meet the RoHS and Green ID 58 A Product requirement, 100% EAS guaranteed with full function reliability approved. 100% EAS Gua
8.8. Size:638K 1
hsba3094.pdf
HSBA3094 N-Ch 30V Fast Switching MOSFETs General Description Product Summary V 30 V DS 100% UIS Tested Advanced Trench Technology R 1.8 m DS(ON),typ Low Gate Charge High Current Capability I 85 A D RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration Power Management in Desktop Computer DC/DC Converters Absolute
8.9. Size:732K 1
hsba3054.pdf
HSBA3054 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 4.5 m Isolated DC/DC Converters in Telecom and Industrial. ID 50 A Description PRPAK5*6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect dec
8.10. Size:778K 1
hsba3031.pdf
HSBA3031 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA3031 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.2 m gate charge for most of the synchronous buck converter applications. ID -70 A The HSBA3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
8.11. Size:443K 1
hsba3016.pdf
HSBA3016 N-Ch 30V Fast Switching MOSFETs Product Summary Description VDS 30 V The HSBA3016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 4 m gate charge for most of the synchronous buck converter applications. ID 108 A The HSBA3016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliabi
8.12. Size:698K huashuo
hsba3050.pdf
HSBA3050 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 3 m Isolated DC/DC Converters in Telecom and Industrial. ID 75 A Features 100% EAS Guaranteed Green Device Available PRPAK5*6 Pin Configuration Super Low Gate Charge Excellent CdV/dt effect
8.13. Size:395K huashuo
hsba3014.pdf
HSBA3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBA3014 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 12 m synchronous buck converter applications. ID 50 A The HSBA3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
8.14. Size:945K huashuo
hsba3048.pdf
HSBA3048 N-Ch 30V Fast Switching MOSFETs General Description Product Summary VDS 30 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 1.3 m Low Gate Charge High Current Capability ID 100 A RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration Power Management in Desktop Computer DC/DC Converters Absolute Maxi
8.15. Size:744K huashuo
hsba3056.pdf
HSBA3056 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 3.2 m Isolated DC/DC Converters in Telecom and Industrial. ID 73 A Features 100% EAS Guaranteed Green Device Available PRPAK5*6 Pin Configuration Super Low Gate Charge Excellent CdV/dt effe
8.16. Size:755K huashuo
hsba3058.pdf
HSBA3058 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 6 m Isolated DC/DC Converters in Telecom and Industrial. ID 30 A Features PRPAK5*6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect
8.17. Size:503K huashuo
hsba3052.pdf
HSBA3052 N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSBA3052 is the high cell density Trench V 30 V DSMOSFET, which provide excellent RDSON and gate charge for DC/DC converters application. R 5 m DS(ON),TYPThe HSBA3052 meet the RoHS and Green I 52 A DProduct requirement, 100% EAS guaranteed with full function reliability approved. 100% EA
8.18. Size:518K huashuo
hsba3004.pdf
HSBA3004 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSBA3004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),max 8.5 m and gate charge for most applications. The HSBA3004 meet the RoHS and Green ID 58 A Product requirement, 100% EAS guaranteed with full function reliability approved. 100% EAS Gua
8.19. Size:638K huashuo
hsba3094.pdf
HSBA3094 N-Ch 30V Fast Switching MOSFETs General Description Product Summary V 30 V DS 100% UIS Tested Advanced Trench Technology R 1.8 m DS(ON),typ Low Gate Charge High Current Capability I 85 A D RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration Power Management in Desktop Computer DC/DC Converters Absolute
8.20. Size:732K huashuo
hsba3054.pdf
HSBA3054 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 4.5 m Isolated DC/DC Converters in Telecom and Industrial. ID 50 A Description PRPAK5*6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect dec
8.21. Size:778K huashuo
hsba3031.pdf
HSBA3031 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA3031 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.2 m gate charge for most of the synchronous buck converter applications. ID -70 A The HSBA3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
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History: 2SK796
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