HSBA4006 Todos los transistores

 

HSBA4006 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBA4006
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 46 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 193 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: PRPAK5X6

 Búsqueda de reemplazo de MOSFET HSBA4006

 

HSBA4006 Datasheet (PDF)

 ..1. Size:438K  1
hsba4006.pdf

HSBA4006
HSBA4006

HSBA4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSBA4006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSBA4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 ..2. Size:438K  huashuo
hsba4006.pdf

HSBA4006
HSBA4006

HSBA4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSBA4006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSBA4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 8.1. Size:556K  1
hsba4016.pdf

HSBA4006
HSBA4006

HSBA4016 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4016 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 6.5 m converter applications. ID 75 A The HSBA4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function relia

 8.2. Size:690K  1
hsba4094.pdf

HSBA4006
HSBA4006

HSBA4094 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 2.5 m Low Gate Charge High Current Capability ID 118 A RoHS and Halogen-Free Compliant 100% EAS Guaranteed Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Conve

 8.3. Size:771K  1
hsba4048.pdf

HSBA4006
HSBA4006

HSBA4048 N-Ch 40V Fast Switching MOSFETs Product Summary General Description V 40 V DS 100% UIS Tested Advanced Trench Technology R 1.8 m DS(ON),max Low Gate Charge High Current Capability I 100 A D RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Converters Or-ing

 8.4. Size:556K  huashuo
hsba4016.pdf

HSBA4006
HSBA4006

HSBA4016 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4016 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 6.5 m converter applications. ID 75 A The HSBA4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function relia

 8.5. Size:690K  huashuo
hsba4094.pdf

HSBA4006
HSBA4006

HSBA4094 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 2.5 m Low Gate Charge High Current Capability ID 118 A RoHS and Halogen-Free Compliant 100% EAS Guaranteed Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Conve

 8.6. Size:771K  huashuo
hsba4048.pdf

HSBA4006
HSBA4006

HSBA4048 N-Ch 40V Fast Switching MOSFETs Product Summary General Description V 40 V DS 100% UIS Tested Advanced Trench Technology R 1.8 m DS(ON),max Low Gate Charge High Current Capability I 100 A D RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration SMPS Synchronous Rectification DC/DC Converters Or-ing

 8.7. Size:623K  huashuo
hsba4052.pdf

HSBA4006
HSBA4006

HSBA4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBA4052 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 50 A The HSBA4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

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