HSBA6016 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSBA6016
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 52 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.2 nS
Cossⓘ - Capacitancia de salida: 210 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: PRPAK5X6
Búsqueda de reemplazo de MOSFET HSBA6016
HSBA6016 Datasheet (PDF)
hsba6016.pdf
HSBA6016 Description Product Summary The HSBA6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 52 A The HSBA6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guarant
hsba6016.pdf
HSBA6016 Description Product Summary The HSBA6016 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 52 A The HSBA6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l 100% EAS Guarant
hsba6074.pdf
HSBA6074 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6074 is the high cell density SGT N-ch V 60 V DSMOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 1.7 m DS(ON),typconverter applications. I 100 A DThe HSBA6074 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
hsba6040.pdf
HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat
hsba6066.pdf
HSBA6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON)R 4.4 m DS(ON),typ 100% EAS Guaranteed I 78 A D Green Device Available PRPAK5X6 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute
hsba6048.pdf
HSBA6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6048 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 3.6 m DS(ON),maxconverter applications. I 85 A DThe HSBA6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
hsba6032.pdf
HSBA6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6032 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 7.1 m converter applications. ID 60 A The HSBA6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
hsba6040.pdf
HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat
hsba6066.pdf
HSBA6066 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology V 60 V DS Low Gate Charge Low R DS(ON)R 4.4 m DS(ON),typ 100% EAS Guaranteed I 78 A D Green Device Available PRPAK5X6 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute
hsba6048.pdf
HSBA6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6048 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 3.6 m DS(ON),maxconverter applications. I 85 A DThe HSBA6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
hsba6032.pdf
HSBA6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6032 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 7.1 m converter applications. ID 60 A The HSBA6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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