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HSBB3056 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBB3056
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20.1 nS
   Cossⓘ - Capacitancia de salida: 556 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: PRPAK3X3
 

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HSBB3056 Datasheet (PDF)

 ..1. Size:794K  1
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HSBB3056

HSBB3056 N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSBB3056 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.2 m gate charge for most of the synchronous buck converter applications. ID 35 A The HSBB3056 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reli

 ..2. Size:794K  huashuo
 hsbb3056.pdf pdf_icon

HSBB3056

HSBB3056 N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSBB3056 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.2 m gate charge for most of the synchronous buck converter applications. ID 35 A The HSBB3056 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reli

 7.1. Size:762K  1
 hsbb3058.pdf pdf_icon

HSBB3056

HSBB3058 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 6 m Isolated DC/DC Converters in Telecom and Industrial. ID 28 A Features PRPAK3*3 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect

 7.2. Size:557K  1
 hsbb3052.pdf pdf_icon

HSBB3056

HSBB3052 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBB3052 is the high cell density trenched N-V 30 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 5 m DS(ON),typconverter applications. I 30 A DThe HSBB3052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

MOSTRAR MÁS

Otros transistores... HSBB0012 , HSBB02P15 , HSBB2627 , HSBB3002 , HSBB3004 , HSBB3016 , HSBB3052 , HSBB3054 , 12N60 , HSBB3058 , HSBB3060 , HSBB3062 , HSBB3103 , HSBB3105 , HSBB3115 , HSBB3214 , HSBB4016 .

 

 
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