HSBB6115 Todos los transistores

 

HSBB6115 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBB6115
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23.6 nS
   Cossⓘ - Capacitancia de salida: 224 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: PRPAK3X3
 

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HSBB6115 Datasheet (PDF)

 ..1. Size:472K  1
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HSBB6115

HSBB6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSBB6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 20 m gate charge for most of the synchronous buck converter applications. ID -26 A The HSBB6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 ..2. Size:472K  huashuo
hsbb6115.pdf pdf_icon

HSBB6115

HSBB6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSBB6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 20 m gate charge for most of the synchronous buck converter applications. ID -26 A The HSBB6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 7.1. Size:498K  1
hsbb6113.pdf pdf_icon

HSBB6115

HSBB6113 P-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBB6113 is the high cell density trenched P-V -60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 90 m DS(ON),maxconverter applications. I -13 A DThe HSBB6113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full funct

 9.1. Size:785K  1
hsbb6056.pdf pdf_icon

HSBB6115

HSBB6056 N-Ch 60V Fast Switching MOSFETs Description Product Summary Advanced Trench MOS Technology VDS 60 V Low Gate Charge Low RDS(ON) RDS(ON),typ 7 m 100% EAS Guaranteed ID 30 A Green Device Available PRPAK3X3 Pin Configuration Application Motor Control. DC/DC Converter. Synchronous rectifier applications. Absolute Maximum R

Otros transistores... HSBB3115 , HSBB3214 , HSBB4016 , HSBB4052 , HSBB4062 , HSBB4115 , HSBB6056 , HSBB6066 , 4N60 , HSBB8008 , HSBE2730 , HSBE2738 , HSBF3202 , HSBG2024 , HSBG2103 , HSCA2030 , HSCB1216 .

History: WNMD2153 | IRFRC20PBF | HSBG2103 | MTB340N11N6 | WNM2030 | FDBL86363F085 | WMP08N65C4

 

 
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