HSCC8211 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSCC8211

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 83 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: DFN2X3

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HSCC8211 datasheet

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 hscc8211.pdf pdf_icon

HSCC8211

HSCC8211 1 Dual N-Ch Fast Switching MOSFETs General Description Product Summary The HSCC8211 is the low RDSON trenched N- VDS 20 V CH MOSFETs with robust ESD protection. This RDS(ON),max 13 m product is suitable for Lithium-ion battery pack applications. ID 8 A The HSCC8211 meet the RoHS and Green Product requirement with full function reliability approved. Low d

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 hscc8204.pdf pdf_icon

HSCC8211

HSCC8204 Dual N-Ch Fast Switching MOSFETs Product Summary General Description V 20 V DS The HSCC8204 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This R 9 m DS(ON),max product is suitable for Lithium-ion battery pack applications. I 9.5 A D The HSCC8204 meet the RoHS and Green Product requirement with full function reliability approved

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 hscc8233.pdf pdf_icon

HSCC8211

HSCC8233 Dual N-Ch Fast Switching MOSFETs Product Summary General Description VDS 20 V The HSCC8233 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This RDS(ON),max 7.2 m product is suitable for Lithium-ion battery pack applications. ID 11 A The HSCC8233 meet the RoHS and Green Product requirement with full function reliability approved. D

Otros transistores... HSCB1216, HSCB2012, HSCB2016, HSCB20D03, HSCB2307, HSCB3010, HSCC2734, HSCC8204, IRF1407, HSCC8233, HSCE2530, HSCE2631, HSCE6032, HSCS2050, HSCS2052, HSD6004, HSD6016