HSCC8211 Todos los transistores

 

HSCC8211 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSCC8211
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 10.6 nC
   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 83 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: DFN2X3

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HSCC8211 Datasheet (PDF)

 ..1. Size:794K  huashuo
hscc8211.pdf

HSCC8211
HSCC8211

HSCC82111 Dual N-Ch Fast Switching MOSFETs General Description Product Summary The HSCC8211 is the low RDSON trenched N-VDS 20 V CH MOSFETs with robust ESD protection. This RDS(ON),max 13 m product is suitable for Lithium-ion battery pack applications. ID 8 A The HSCC8211 meet the RoHS and Green Product requirement with full function reliability approved. Low d

 8.1. Size:678K  huashuo
hscc8204.pdf

HSCC8211
HSCC8211

HSCC8204 Dual N-Ch Fast Switching MOSFETs Product Summary General Description V 20 V DS The HSCC8204 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This R 9 m DS(ON),max product is suitable for Lithium-ion battery pack applications. I 9.5 A D The HSCC8204 meet the RoHS and Green Product requirement with full function reliability approved

 8.2. Size:670K  huashuo
hscc8233.pdf

HSCC8211
HSCC8211

HSCC8233 Dual N-Ch Fast Switching MOSFETs Product Summary General Description VDS 20 V The HSCC8233 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This RDS(ON),max 7.2 m product is suitable for Lithium-ion battery pack applications. ID 11 A The HSCC8233 meet the RoHS and Green Product requirement with full function reliability approved. D

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