HSM4062 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HSM4062
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 3.8 nC
   trⓘ - Tiempo de subida: 5.3 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET HSM4062

HSM4062 Datasheet (PDF)

..1. Size:742K huashuo
hsm4062.pdf

HSM4062 N-Ch 40V Fast Switching MOSFETs Features Product Summary Advanced Trench MOS Technology VDS 40 V Low Gate Charge RDS(ON),typ 12.5 m 100% EAS Guaranteed Green Device Available ID 9.5 A Applications Power Management Functions SOP8 Pin Configuration DC-DC Converters. Backlighting. Absolute Maximum Ratings Symbol Parameter Rating

9.1. Size:2050K huashuo
hsm4004.pdf

HSM4004 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4004 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 10 A The HSM4004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit

9.2. Size:715K huashuo
hsm4094.pdf

HSM4094 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 2.5 m Low Gate Charge High Current Capability ID 24 A RoHS and Halogen-Free Compliant 100% EAS Guaranteed Applications SOP-8 Pin Configuration SMPS Synchronous Rectification DC/DC Converters

9.3. Size:424K huashuo
hsm4006.pdf

HSM4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary VDS 40 V The HSM4006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.5 m gate charge for most of the synchronous buck converter applications. ID 12 A The HSM4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

9.4. Size:2141K huashuo
hsm4002.pdf

HSM4002 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4002 is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 28 m gate charge for most of the synchronous buck converter applications. ID 7.5 A The HSM4002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

9.5. Size:778K huashuo
hsm4052.pdf

HSM4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4052 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 14 A The HSM4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

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