HSM4407 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSM4407

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35.8 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: SOP8

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HSM4407 datasheet

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HSM4407

HSM4407 P-Ch 30V Fast Switching MOSFETs General Description Product Summary The HSM4407 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 15 m gate charge for most of the synchronous buck converter applications. ID -11.5 A The HSM4407 meet the RoHS and Green Product requirement 100% EAS guaranteed with full functio

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HSM4407

HSM4435 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM4435 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 18 m gate charge for most of the synchronous buck converter applications. ID -9.5 A The HSM4435 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

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HSM4407

HSM4410 Description Product Summary The HSM4410 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 9.5 m converter applications. ID 12 A The HSM4410 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gate C

Otros transistores... HSM4052, HSM4062, HSM4094, HSM4103, HSM4113, HSM4115, HSM4204, HSM4313, 7N65, HSM4410, HSM4435, HSM4606, HSM4805, HSM6032, HSM6113, HSM6115, HSM6303