HSP150N15 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSP150N15

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 310 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 200 nS

Cossⓘ - Capacitancia de salida: 700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO220

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HSP150N15 datasheet

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 hsp150n15.pdf pdf_icon

HSP150N15

HSP150N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSP150N15 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 5 m and gate charge for most of the synchronous buck converter applications. ID 150 A The HSP150N15 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

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 hsp150n02.pdf pdf_icon

HSP150N15

HSP150N02 N-Ch 150V Fast Switching MOSFETs Description Product Summary The HSP150N02 is the highest performance VDS 150 V trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate RDS(ON),typ 12 m charge for most of the synchronous buck ID 120 A converter applications. The HSP150N02 meet the RoHS and Green Product requirement, 100% EA

 9.1. Size:945K  huashuo
 hsp15810c.pdf pdf_icon

HSP150N15

HSP15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description V 100% EAS Guaranteed DS 100 V Green Device Available R 4.7 m DS(ON),typ Super Low RDS (ON) Advanced high cell density Trench I 120 A D technology TO220 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous recti

Otros transistores... HSP0016, HSP0018A, HSP0024A, HSP0048, HSP0115, HSP0139, HSP120N08, HSP150N02, 5N65, HSP15810C, HSP18N20, HSP200N02, HSP3018B, HSP3105, HSP4024A, HSP4048, HSP6016