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HSP6048 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSP6048
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 255 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 1522 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: TO220
 

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HSP6048 Datasheet (PDF)

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HSP6048

HSP6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6048 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 3 m converter applications. ID 150 A The HSP6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability

 8.1. Size:572K  huashuo
hsp6040.pdf pdf_icon

HSP6048

HSP6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 140 A The HSP6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

 9.1. Size:742K  huashuo
hsp6032a.pdf pdf_icon

HSP6048

HSP6032A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6032A is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 7.1 m converter applications. ID 75 A The HSP6032A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

 9.2. Size:501K  huashuo
hsp6016.pdf pdf_icon

HSP6048

HSP6016 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6016 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 12 m buck converter applications. ID 60 A The HSP6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

Otros transistores... HSP3018B , HSP3105 , HSP4024A , HSP4048 , HSP6016 , HSP6024A , HSP6032A , HSP6040 , CS150N03A8 , HSP6115 , HSP8004 , HSP80P10 , HSP8N50 , HSS0008 , HSS0127 , HSS1N20 , HSS2012 .

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