HSS2308A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSS2308A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 2.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 2.5 V

Carga de compuerta (Qg): 5 nC

Tiempo de elevación (tr): 7.2 nS

Conductancia de drenaje-sustrato (Cd): 38 pF

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: SOT23

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HSS2308A Datasheet (PDF)

0.1. hss2308a.pdf Size:483K _huashuo

HSS2308A N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSS2308A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 100 m and efficiency for most of the small power switching and load switch applications. ID 2.3 A The HSS2308A meet the RoHS and Green Product requirement with full function reliability app

8.1. hss2301b.pdf Size:482K _huashuo

HSS2301B P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2301B is the high cell density trenched P-V -20 V DSch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching R 89 m DS(ON),typand load switch applications. I -3 A DThe HSS2301B meet the RoHS and Green Product requirement with full function reliability ap

8.2. hss2307a.pdf Size:478K _huashuo

HSS2307A P-Ch 30V Fast Switching MOSFETs Product Summary Description The HSS2307A is the high cell density trenched P-VDS -30 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 43 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The HSS2307A meet the RoHS and Green Product requirement with full function reliability ap

8.3. hss2301c.pdf Size:1062K _huashuo

HSS2301C P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2301C is the high cell density trenched P-V -20 V DSch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching R 130 m DS(ON),typand load switch applications. I -2 A DThe HSS2301C meet the RoHS and Green Product requirement with full function reliability a

8.4. hss2305a.pdf Size:1361K _huashuo

HSS2305A P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2305A is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The HSS2305A meet the RoHS and Green Product requirement with full function reliability approved. l

8.5. hss2307.pdf Size:1071K _huashuo

HSS2307 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2307 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 20 m converter applications. ID -6 A The HSS2307 meet the RoHS and Green Product requirement with full function reliability approved. Su

8.6. hss2306a.pdf Size:487K _huashuo

HSS2306A N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSS2306A is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. The HSS2306A meet the RoHS and Green Product ID 4.6 A requirement with full function reliability appr

8.7. hss2300a.pdf Size:3082K _huashuo

HSS2300A N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSS2300A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 26 m and efficiency for most of the small power switching and load switch applications. ID 6 A The HSS2300A meet the RoHS and Green Product requirement with full function reliability approved

8.8. hss2302b.pdf Size:420K _huashuo

HSS2302B N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSS2302B is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 46 m power switching and load switch applications. ID 3 A The HSS2302B meets the RoHS and Green Product requirement with full function reliability ap

8.9. hss2302a.pdf Size:475K _huashuo

HSS2302A N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSS2302A is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 30 m power switching and load switch applications. ID 3.6 A The HSS2302A meets the RoHS and Green Product requirement with full function reliability

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