HSS2310A Todos los transistores

 

HSS2310A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSS2310A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 2.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 2.5 V

Carga de compuerta (Qg): 5 nC

Tiempo de elevación (tr): 7.2 nS

Conductancia de drenaje-sustrato (Cd): 38 pF

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: SOT23

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HSS2310A Datasheet (PDF)

0.1. hss2310a.pdf Size:482K _huashuo

HSS2310A
HSS2310A

HSS2310A N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSS2310A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),typ 80 m and efficiency for most of the small power switching and load switch applications. ID 2.3 A The HSS2310A meet the RoHS and Green Product requirement with full function reliability appr

8.1. hss2319.pdf Size:478K _huashuo

HSS2310A
HSS2310A

HSS2319 P-Ch 40V Fast Switching MOSFETs Product Summary Description VDS -40 V The HSS2319 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON RDS(ON),max 70 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The HSS2919 meet the RoHS and Green Product requirement with full function reliability appro

8.2. hss2312a.pdf Size:1050K _huashuo

HSS2310A
HSS2310A

HSS2312A N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSS2312A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 26 m and efficiency for most of the small power switching and load switch applications. ID 6 A The HSS2312A meet the RoHS and Green Product requirement with full function reliability approv

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