HSS3409A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HSS3409A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 3.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 5.22 nC
   Tiempo de subida (tr): 11.4 nS
   Conductancia de drenaje-sustrato (Cd): 82 pF
   Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
   Paquete / Cubierta: SOT23S

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HSS3409A Datasheet (PDF)

..1. Size:478K huashuo
hss3409a.pdf

HSS3409A P-Ch 30V Fast Switching MOSFETs Product Summary Description The HSS3409A is the high cell density trenched P-VDS -30 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 43 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The HSS3409A meet the RoHS and Green Product requirement with full function reliability ap

8.1. Size:517K huashuo
hss3401a.pdf

HSS3401A P-Ch 30V Fast Switching MOSFETs Description Product Summary V -30 V DSThe HSS3401A is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON R 53 m DS(ON),maxand efficiency for most of the small power switching and load switch applications. I -4.3 A DThe HSS3401A meet the RoHS and Green Product requirement with full function reliabili

8.2. Size:1048K huashuo
hss3402a.pdf

HSS3402A N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSS3402A is the high cell density trenched N-V 30 V DSch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching R 34 m DS(ON),typand load switch applications. I 4 A DThe HSS3402A meet the RoHS and Green Product requirement with full function reliability

8.3. Size:1369K huashuo
hss3407a.pdf

HSS3407A P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSS3407A is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON RDS(ON),max 70 m and efficiency for most of the small power switching and load switch applications. ID -3.1 A The HSS3407A meet the RoHS and Green Product requirement, with full function reliability a

8.4. Size:2508K huashuo
hss3400a.pdf

HSS3400A Description Product Summary VDS 30 V The HSS3400A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 26 m and efficiency for most of the small power switching and load switch applications. ID 5.5 A The HSS3400A meet the RoHS and Green Product requirement with full function reliability approved. l Green Device Available

8.5. Size:486K huashuo
hss3404a.pdf

HSS3404A N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSS3404A is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. The HSS3404A meet the RoHS and Green Product ID 4.6 A requirement with full function reliability appr

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