HSS3416E Todos los transistores

 

HSS3416E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSS3416E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

HSS3416E Datasheet (PDF)

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HSS3416E

HSS3416E N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS3416E is the high cell density trenched N-VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),TYP 20 m and efficiency for most of the small power switching and load switch applications. ID 6 A The HSS3416E meet the RoHS and Green Product requirement with full function reliability approved

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HSS3416E

HSS3414A N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSS3414A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 26 m and efficiency for most of the small power switching and load switch applications. ID 6 A The HSS3414A meet the RoHS and Green Product requirement with full function reliability approv

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HSS3416E

HSS3415E P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS3415E is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.3 A The HSS3415E meet the RoHS and Green Product requirement with full function reliability approved. l Sup

 9.1. Size:517K  huashuo
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HSS3416E

HSS3401A P-Ch 30V Fast Switching MOSFETs Description Product Summary V -30 V DSThe HSS3401A is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON R 53 m DS(ON),maxand efficiency for most of the small power switching and load switch applications. I -4.3 A DThe HSS3401A meet the RoHS and Green Product requirement with full function reliabili

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