2SK1917-MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1917-MR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET 2SK1917-MR

2SK1917-MR Datasheet (PDF)

..1. Size:263K fuji
2sk1917-mr.pdf

FUJI POWER MOSFET2SK1917-MRN-CHANNEL SILICON POWER MOSFETF-II SERIESOutline DrawingsFeaturesHigh speed switchingTO-220F15Low on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeApplications Switching regulators2.54UPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECEIAJ SC-67Equivalent circuit schematicMax

5.1. Size:217K inchange semiconductor
2sk1917-m.pdf

isc N-Channel MOSFET Transistor 2SK1917-MDESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY

7.1. Size:212K inchange semiconductor
2sk1917.pdf

isc N-Channel MOSFET Transistor 2SK1917DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UN

8.1. Size:177K fuji
2sk1916-01r.pdf

8.2. Size:98K no
2sk1915 2sk1927 2sk1928.pdf

8.3. Size:48K inchange semiconductor
2sk1913.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1913 DESCRIPTION Drain Current ID= 4A@ TC=25 Drain Source Voltage- : VDSS=600V(Min) Fast Switching Speed APPLICATIONS High speed ,high current switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source V

8.4. Size:221K inchange semiconductor
2sk1916.pdf

isc N-Channel MOSFET Transistor 2SK1916DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNIT

Otros transistores... 2SK1794 , 2SK1795 , 2SK1796 , 2SK1824 , 2SK1850 , 2SK1851 , 2SK1852 , 2SK1853 , IRF3710 , 2SK193 , 2SK195 , 2SK1953 , 2SK1954 , 2SK1958 , 2SK1959 , 2SK1960 , 2SK1988 .

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