HSU0048 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSU0048

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 108 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 73 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 605 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: TO252

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HSU0048 datasheet

 ..1. Size:610K  huashuo
hsu0048.pdf pdf_icon

HSU0048

HSU0048 N-Ch 100V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Low R DS(ON) VDS 100 V Low Gate Charge RoHs and Halogen-Free Compliant RDS(ON),TYP 6.6 m ID 73 A Description TO252 Pin Configuration The HSU0048 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rec

 9.1. Size:704K  huashuo
hsu0026.pdf pdf_icon

HSU0048

HSU0026 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0026 is the high cell density trenched N- VDS 100 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 16 m gate charge for most of the synchronous buck converter applications. ID 40 A The HSU0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

 9.2. Size:570K  huashuo
hsu0018a.pdf pdf_icon

HSU0048

HSU0018A Description Product Summary The HSU0018A is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),max 22 m and gate charge for most of the synchronous buck converter applications. ID 45 A The HSU0018A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO252 Pin Con

 9.3. Size:536K  huashuo
hsu0004.pdf pdf_icon

HSU0048

HSU0004 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSU0004 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),max 112 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 12 A applications . The HSU0004 meet the RoHS and Green Product requirement, 100% EAS guara

Otros transistores... HSSK8811, HSSN3134, HSSN3139, HSST3134, HSST3139, HSU0004, HSU0018A, HSU0026, IRFP460, HSU0115, HSU0139, HSU100P03, HSU1241, HSU12N10, HSU150N03, HSU16N25, HSU18N20