HSU3006 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HSU3006
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 53 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 267 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET HSU3006

HSU3006 Datasheet (PDF)

..1. Size:2281K huashuo
hsu3006.pdf

HSU3006 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSU3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.5 m gate charge for most of the synchronous buck converter applications. ID 80 A The HSU3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

9.1. Size:695K huashuo
hsu3018b.pdf

HSU3018B N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSU3018B is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 2.4 m buck converter applications. ID 110 A The HSU3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

9.2. Size:2447K huashuo
hsu3031.pdf

HSU3031 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU3031 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.2 m gate charge for most of the synchronous buck converter applications. ID -70 A The HSU3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

9.3. Size:2270K huashuo
hsu3016.pdf

HSU3016 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3016 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 4 m gate charge for most of the synchronous buck converter applications. ID 96 A The HSU3016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability

9.4. Size:2272K huashuo
hsu3014.pdf

HSU3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3014 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 12 m converter applications. ID 43 A The HSU3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: