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HSU3006 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSU3006
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 53 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 80 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 15 nS
   Conductancia de drenaje-sustrato (Cd): 267 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
   Paquete / Cubierta: TO252

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HSU3006 Datasheet (PDF)

 ..1. Size:2281K  huashuo
hsu3006.pdf

HSU3006 HSU3006

HSU3006 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSU3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.5 m gate charge for most of the synchronous buck converter applications. ID 80 A The HSU3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

 9.1. Size:695K  huashuo
hsu3018b.pdf

HSU3006 HSU3006

HSU3018B N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSU3018B is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 2.4 m buck converter applications. ID 110 A The HSU3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 9.2. Size:2447K  huashuo
hsu3031.pdf

HSU3006 HSU3006

HSU3031 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU3031 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.2 m gate charge for most of the synchronous buck converter applications. ID -70 A The HSU3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 9.3. Size:2270K  huashuo
hsu3016.pdf

HSU3006 HSU3006

HSU3016 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3016 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 4 m gate charge for most of the synchronous buck converter applications. ID 96 A The HSU3016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability

 9.4. Size:2272K  huashuo
hsu3014.pdf

HSU3006 HSU3006

HSU3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3014 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 12 m converter applications. ID 43 A The HSU3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit

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