HSU4006 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HSU4006
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 18.8 nC
   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 193 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: TO252

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HSU4006 Datasheet (PDF)

..1. Size:2236K huashuo
hsu4006.pdf

HSU4006 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4006 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 7.5 m converter applications. ID 60 A The HSU4006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

8.1. Size:443K huashuo
hsu4004.pdf

HSU4004 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4004 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),TYP 9.5 m buck converter applications. ID 42 A The HSU4004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

9.1. Size:734K huashuo
hsu4094.pdf

HSU4094 N-Ch 40V Fast Switching MOSFETs Product Summary General Description VDS 40 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 2.5 m Low Gate Charge High Current Capability ID 114 A RoHS and Halogen-Free Compliant 100% EAS Guaranteed Applications TO-252 Pin Configuration SMPS Synchronous Rectification DC/DC Converte

9.2. Size:2250K huashuo
hsu4016.pdf

HSU4016 N-Ch 40V Fast Switching MOSFETs Product Summary Description The HSU4016 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 6.5 m converter applications. ID 75 A The HSU4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliabil

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