HSU4103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSU4103
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 35 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 27 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 11.5 nC
Tiempo de subida (tr): 15.7 nS
Conductancia de drenaje-sustrato (Cd): 134 pF
Resistencia entre drenaje y fuente RDS(on): 0.032 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET HSU4103
HSU4103 Datasheet (PDF)
hsu4103.pdf
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HSU4103 P-Ch 40V Fast Switching MOSFETs Description Product Summary VDS -40 V The HSU4103 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 32 m gate charge for most of the synchronous buck converter applications. ID -27 A The HSU4103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
hsu4115.pdf
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HSU4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4115 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -52 A The HSU4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
hsu4113.pdf
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HSU4113 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4113 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 40 m gate charge for most of the synchronous buck converter applications. ID -23 A The HSU4113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil
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