HSU6008 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HSU6008
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 20.8 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 10 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 5 nC
   Tiempo de subida (tr): 7.2 nS
   Conductancia de drenaje-sustrato (Cd): 38 pF
   Resistencia entre drenaje y fuente RDS(on): 0.09 Ohm
   Paquete / Cubierta: TO252

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HSU6008 Datasheet (PDF)

..1. Size:700K huashuo
hsu6008.pdf

HSU6008 N-Ch 60V Fast Switching MOSFETs Product Summary Description V 60 V DSThe HSU6008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON R 100 m DS(ON),maxand efficiency for most of the small power switching and load switch applications. I 10 A DThe HSU6008 meet the RoHS and Green Product requirement with full function reliability a

8.1. Size:494K huashuo
hsu6004.pdf

HSU6004 N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DSThe HSU6004 is the high cell density trenched N-ch MOSFETs, which provide excellent R 30 m DS(ON),maxRDSON and gate charge for most of the synchronous buck converter applications. I 23 A DThe HSU6004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

8.2. Size:469K huashuo
hsu6006.pdf

HSU6006 N-Ch 60V Fast Switching MOSFETs Description Product Summary VDS 60 V The HSU6006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDS(ON),max 20 m RDSON and gate charge for most of the synchronous buck converter applications. ID 35 A The HSU6006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit

8.3. Size:626K huashuo
hsu6002.pdf

HSU6002 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSU6002 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 70 m DS(ON),maxconverter applications. I 17 A DThe HSU6002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

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