HSU60P02 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSU60P02
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 61 nS
Cossⓘ - Capacitancia de salida: 509 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de HSU60P02 MOSFET
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HSU60P02 datasheet
hsu60p03.pdf
HSU60P03 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU60P03 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.5 m gate charge for most of the synchronous buck converter applications. ID -60 A The HSU60P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
hsu6004.pdf
HSU6004 N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DS The HSU6004 is the high cell density trenched N-ch MOSFETs, which provide excellent R 30 m DS(ON),max RDSON and gate charge for most of the synchronous buck converter applications. I 23 A D The HSU6004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
hsu60n02.pdf
HSU60N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSU60N02 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 4 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSU60N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil
Otros transistores... HSU6002, HSU6004, HSU6006, HSU6008, HSU6014, HSU6032, HSU6040, HSU60N02, SKD502T, HSU60P03, HSU6113, HSU6115, HSU6901, HSU6903, HSU70P06, HSU80N03, HSU90N02
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