HSU60P02 Todos los transistores

 

HSU60P02 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSU60P02
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 61 nS
   Cossⓘ - Capacitancia de salida: 509 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de HSU60P02 MOSFET

   - Selección ⓘ de transistores por parámetros

 

HSU60P02 Datasheet (PDF)

 ..1. Size:519K  huashuo
hsu60p02.pdf pdf_icon

HSU60P02

HSU60P02 P-Ch 20V Fast Switching MOSFETs Description Product Summary VDS -20 V The HSU60P02 is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON),typ 6.6 m RDSON and gate charge for most of the synchronous buck converter applications. ID -60 A The HSU60P02 meet the RoHS and Green Product requirement with full function reliability approved.

 7.1. Size:477K  huashuo
hsu60p03.pdf pdf_icon

HSU60P02

HSU60P03 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU60P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.5 m gate charge for most of the synchronous buck converter applications. ID -60 A The HSU60P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 9.1. Size:494K  huashuo
hsu6004.pdf pdf_icon

HSU60P02

HSU6004 N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DSThe HSU6004 is the high cell density trenched N-ch MOSFETs, which provide excellent R 30 m DS(ON),maxRDSON and gate charge for most of the synchronous buck converter applications. I 23 A DThe HSU6004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 9.2. Size:1455K  huashuo
hsu60n02.pdf pdf_icon

HSU60P02

HSU60N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSU60N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 4 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSU60N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

Otros transistores... HSU6002 , HSU6004 , HSU6006 , HSU6008 , HSU6014 , HSU6032 , HSU6040 , HSU60N02 , IRF9540N , HSU60P03 , HSU6113 , HSU6115 , HSU6901 , HSU6903 , HSU70P06 , HSU80N03 , HSU90N02 .

History: STL22N65M5

 

 
Back to Top

 


 
.