STD10N10-1 Todos los transistores

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 std10n10-1 std10n10t4.pdf

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 std10n10l-1 std10n10lt4.pdf

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 stu10n10 std10n10.pdf

STU10N10 Green Product STD10N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 620 @ VGS=10V TO-252 and TO-251 Package. 100V 5A 721 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( )

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 stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D PAK, DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS @ TJmax max ID 1 3 1 DPAK STB10N60M2 D 2 PAK STD10N60M2 650 V 0.600 7.5 A STP10N60M2 TAB TAB STU10N60M2 3 Extremely low gate ch

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 std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS RDS(on) Order codes ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V

 8.3. Size:868K  st
 std10nf30.pdf

STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 typ., MESH OVERLAY Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID STD10NF30 300 V 0.33 10 A TAB Designed for automotive applications and 3 AEC-Q101 qualified 1 Gate charge minimized DPAK Very low intrinsic capacitances Applications Switching appli

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 std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf

STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS RDS(on) Type ID Pw @TJmax max. 3 3 STD10NM60N 70 W 2 2 1 1 STF10NM60N 25 W TO-220 TO-220FP 650 V

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 std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf

STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, I PAK, TO-220 and IPAK packages Datasheet production data Features TAB TAB VDSS RDS(on) Order codes ID Pw @TJmax max. 3 1 3 STD10NM60N 70 W 3 2 2 1 DPAK 1 STF10NM60N 25 W I PAK TO-220FP STI10NM60N 650 V

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 std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf

STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 3 1 2 STD10NM65N 710 V

 8.7. Size:457K  st
 std10nf10-1 std10nf10t4 std10nf10.pdf

STD10NF10 STD10NF10-1 N-channel 100V - 0.115 - 13A - DPAK - IPAK Low gate charge STripFET II Power MOSFET General features VDSSS RDS(on) ID Type STD10NF10 100V

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 std10nm60nd stf10nm60nd stp10nm60nd.pdf

STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 typ., 8 A, FDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features V @ R DS DS(on) Order code I P D TOT T max. jmax. STD10NM60ND 70 W STF10NM60ND 650 V 0.60 8 A 25 W STP10NM60ND 70 W Fast-recovery body diode Low gate charge and input capacitance

 8.9. Size:302K  st
 std10nf06l.pdf

STD10NF06L N-CHANNEL 60V - 0.1 - 10A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD10NF06L 60V

 8.10. Size:849K  st
 std10nf10t4.pdf

STD10NF10T4 N-channel 100 V, 0.115 typ., 13 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD10NF10T4 100 V 0.130 13 A Exceptional dv/dt capability Application oriented characterization Applications Switching applications Figure 1 Internal schematic diagram Description D(2, TAB

 8.11. Size:951K  st
 std10nm50n stf10nm50n stp10nm50n.pdf

STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 , 7 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 STD10NM50N 1 TO-220FP TO-220 STF10NM50N 550 V

 8.12. Size:120K  samhop
 stu10n20 std10n20.pdf

STU10N20 Green Product STD10N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 306 @ VGS=10V TO-252 and TO-251 Package. 200V 8A 328 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK (

 8.13. Size:128K  samhop
 stu10n25 std10n25.pdf

STU10N25 Green Product STD10N25 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 250V 9A 258 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK ABS

 8.14. Size:1487K  cn vbsemi
 std10nf06.pdf

STD10NF06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters

 8.15. Size:905K  cn vbsemi
 std10nf10t4.pdf

STD10NF10T4 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI

 8.16. Size:208K  inchange semiconductor
 std10nm65n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM65N FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T

 8.17. Size:208K  inchange semiconductor
 std10nm60n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM60N FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE