SVF7N60CK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SVF7N60CK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 122 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 21.1 nC
Tiempo de subida (tr): 32.7 nS
Conductancia de drenaje-sustrato (Cd): 96 pF
Resistencia entre drenaje y fuente RDS(on): 1.2 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de MOSFET SVF7N60CK
SVF7N60CK Datasheet (PDF)
svf7n60cf svf7n60cs svf7n60ck svf7n60cmj svf7n60cd svf7n60ct.pdf
SVF7N60CF/S/K/MJ/D/T 7A600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS
svf7n60cf svf7n60cs svf7n60cstr svf7n60ck svf7n60cmj svf7n60cd svf7n60cdtr svf7n60ct.pdf
SVF7N60CF/S/K/MJ/D/T 7A600V N 2 SVF7N60CF/S/K/MJ/D/T N MOS 1213 F-CellTM VDMOS TO-251J-3L3
svf7n60f svf7n60s svf7n60d.pdf
SVF7N60F/S/D 7A600V N SVF7N60F/S/D N MOS F-CellTM VDMOS AC-DC
svf7n60t svf7n60f.pdf
SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
svf7n65f svf7n65s svf7n65str svf7n65t.pdf
SVF7N65T/F/S 7A650V N 2 SVF7N65T/F/S N MOS 1 F-CellTM VDMOS 31. 2. 3.
svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65cs svf7n65cfq.pdf
SVF7N65CF/D/MJ/K/S/FQ 7A650V N SVF7N65CF/D/MJ/K/S/FQ N MOS F-CellTM VDMOS
svf7n65t svf7n65f svf7n65s.pdf
SVF7N65T/F/S 7A650V N SVF7N65T/F/S N MOS F-CellTM VDMOS AC-DC
svf7n65f-t.pdf
SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65ct.pdf
SVF7N65CF/D/MJ/K/T 7A650V N 2SVF7N65CF/D/MJ/K/T N MOS 1 F-CellTM VDMOS 123 TO-262-3L3
svf7n65cf svf7n65cdtr svf7n65cmj svf7n65cmjl svf7n65ck svf7n65ct.pdf
SVF7N65CF/D/MJ/MJL/K/T 7A650V N 2 1SVF7N65CF/D/MJ/MJL/K/T N MOS 231 F-CellTM VDMOS TO-262-3L3 12
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
