STD12N05-1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD12N05-1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 80 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: IPAK
Búsqueda de reemplazo de STD12N05-1 MOSFET
- Selecciónⓘ de transistores por parámetros
STD12N05-1 datasheet
6.2. Size:177K st
std12n05.pdf 
STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05 50 V
8.1. Size:321K st
std12nf06l.pdf
STD12NF06L STD12NF06L-1 N-channel 60V - 0.08 - 12A - DPAK - IPAK STripFET II Power MOSFET General features VDSSS RDS(on) ID Type STD12NF06L 60V
8.2. Size:176K st
std12n.pdf
STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05L 50 V
8.3. Size:581K st
std12nm50n stf12nm50n sti12nm50n stp12nm50n.pdf
STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 11 A I PAK TO-220 STD12NM50N 550 V 0.38 11 A 3 1 STI12NM50N 550 V 0.38 11 A DPAK STF12NM50N 550 V 0.38 11 A (1) STP12NM50N 5
8.4. Size:586K st
stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf
STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 11 A I PAK TO-220 STD12NM50N 550 V 0.38 11 A 3 1 STI12NM50N 550 V 0.38 11 A DPAK STF12NM50N 550 V 0.38 11 A (1) STP12NM50N 5
8.5. Size:539K st
std12n60dm2ag.pdf
STD12N60DM2AG Datasheet Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package Features VDS @ TJmax RDS(on ) max. ID Order code TAB STD12N60DM2AG 650 V 430 m 10 A 3 2 1 DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance D(2, TAB) Low on-resistance 100% avalanche test
8.6. Size:1025K st
stb12nm50nd std12nm50nd stf12nm50nd.pdf
STB12NM50ND STD12NM50ND, STF12NM50ND N-channel 500 V, 0.29 , 11 A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 11 A STD12NM50ND 550 V 0.38 11 A STF12NM50ND 550 V 0.38 11 A 3 3 3 2 1 1 1 100% avalanche tested D2PAK DPAK TO-220FP Low input capacitance and gate charge
8.7. Size:81K st
std12ne06l.pdf
STD12NE06L N - CHANNEL 60V - 0.09 - 12A - DPAK SINGLE FEATURE SIZE POWER MOSFET TYPE VDSS RDS(on) ID STD12NE06L 60 V
8.8. Size:443K st
std12nf06.pdf
STD12NF06 N-CHANNEL 60V - 0.08 - 12A IPAK/DPAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STD12NF06 60 V
8.9. Size:333K st
std12nf06-1.pdf
STD12NF06 STD12NF06T4 N-channel 60 V, 0.08 , 12 A, DPAK, IPAK STripFET II Power MOSFET Features VDSSS RDS(on) ID Type STD12NF06 60V
8.10. Size:935K st
std12n65m2.pdf
STD12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (COSS) profile DPAK (TO-252) 100% avalanche tested Zener-protected Figure 1 Internal schematic diagram Applicatio
8.11. Size:106K st
std12ne06.pdf
STD12NE06 N - CHANNEL 60V - 0.08 - 12A - DPAK SINGLE FEATURE SIZE POWER MOSFET TYPE VDSS RDS(on) ID STD12NE06 60 V
8.12. Size:303K st
std12nf06l std12nf06l-1.pdf
STD12NF06L STD12NF06L-1 N-channel 60V - 0.08 - 12A - DPAK - IPAK STripFET II Power MOSFET General features VDSSS RDS(on) ID Type STD12NF06L 60V
8.13. Size:748K st
std12n50m2.pdf
STD12N50M2 N-channel 500 V, 0.325 typ.,10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID STD12N50M2 500 V 0.38 10 A TAB Extremely low gate charge 3 Excellent output capacitance (COSS) profile 1 100% avalanche tested DPAK Zener-protected Applications Switching applications Figure 1. Int
8.14. Size:1040K st
std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf
STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 , 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ RDS(on) Type ID PTOT 3 TJmax max 2 3 1 2 1 STD12N65M5 8.5 A 70 W IPAK TO-220 STF12N65M5 8.5 A(1) 25 W 3 STI12N65M5 710 V
8.15. Size:335K st
std12nf06 std12nf06t4.pdf
STD12NF06 STD12NF06T4 N-channel 60 V, 0.08 , 12 A, DPAK, IPAK STripFET II Power MOSFET Features VDSSS RDS(on) ID Type STD12NF06 60V
8.16. Size:316K st
std12nf06l-1 std12nf06lt4.pdf
STD12NF06L STD12NF06L-1 N-channel 60V - 0.08 - 12A - DPAK - IPAK STripFET II Power MOSFET General features VDSSS RDS(on) ID Type STD12NF06L 60V
Otros transistores... SSW5N90A
, SSW6N70A
, SSW7N60A
, STD10N10-1
, STD10N10L-1
, STD10N10LT4
, STD10N10T4
, STD12N05
, 10N65
, STD12N05L
, STD12N05L-1
, STD12N05LT4
, STD12N05T4
, STD12N06
, STD12N06-1
, STD12N06L
, STD12N06L-1
.
History: IRFZ48S
