BSC0702LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC0702LS
Código: 0702LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 VQgⓘ - Carga de la puerta: 43 nC
trⓘ - Tiempo de subida: 4.8 nS
Cossⓘ - Capacitancia de salida: 670 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
Paquete / Cubierta: SUPERSO8
Búsqueda de reemplazo de MOSFET BSC0702LS
BSC0702LS Datasheet (PDF)
bsc0702ls.pdf
BSC0702LSMOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Ideal for high-frequency switching Optimized for chargers 100% avalanche tested Superior thermal resistance4 N-channel, Logic level132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according to IEC61249-2-21 Qualified for Standard Grade app
bsc070n10ns5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal
bsc070n10ls5.pdf
BSC070N10LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified accor
bsc070n10ns3g.pdf
BSC070N10NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 100 V Very low gate charge for high frequency applicationsRDS(on),max 7mW Optimized for dc-dc conversionID 90 A N-channel, normal levelPG-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature Pb-free lead plating;
bsc070n10ns5sc.pdf
BSC070N10NS5SCMOSFETPG-WSON-8-2OptiMOSTM 5 Power-Transistor, 100 VFeatures Double sided cooled package-with lowest Junction-top thermal resistancetab 175C rated Optimized for high performance SMPS, e.g. sync. rec.56 100% avalanche tested78 Superior thermal resistance43 N-channel21 Pb-free lead plating; RoHS compliant Halogen-fr
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918