BSC0702LS Todos los transistores

 

BSC0702LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSC0702LS
   Código: 0702LS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2.5 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 23 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
   Carga de la puerta (Qg): 43 nC
   Tiempo de subida (tr): 4.8 nS
   Conductancia de drenaje-sustrato (Cd): 670 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0027 Ohm
   Paquete / Cubierta: SUPERSO8

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BSC0702LS Datasheet (PDF)

 ..1. Size:1079K  infineon
bsc0702ls.pdf

BSC0702LS BSC0702LS

BSC0702LSMOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Ideal for high-frequency switching Optimized for chargers 100% avalanche tested Superior thermal resistance4 N-channel, Logic level132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according to IEC61249-2-21 Qualified for Standard Grade app

 8.1. Size:1175K  infineon
bsc070n10ns5.pdf

BSC0702LS BSC0702LS

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal

 8.2. Size:1075K  infineon
bsc070n10ls5.pdf

BSC0702LS BSC0702LS

BSC070N10LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified accor

 8.3. Size:655K  infineon
bsc070n10ns3rev21.pdf

BSC0702LS BSC0702LS

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 8.4. Size:434K  infineon
bsc070n10ns3g.pdf

BSC0702LS BSC0702LS

BSC070N10NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 100 V Very low gate charge for high frequency applicationsRDS(on),max 7mW Optimized for dc-dc conversionID 90 A N-channel, normal levelPG-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature Pb-free lead plating;

 8.5. Size:985K  infineon
bsc070n10ns5sc.pdf

BSC0702LS BSC0702LS

BSC070N10NS5SCMOSFETPG-WSON-8-2OptiMOSTM 5 Power-Transistor, 100 VFeatures Double sided cooled package-with lowest Junction-top thermal resistancetab 175C rated Optimized for high performance SMPS, e.g. sync. rec.56 100% avalanche tested78 Superior thermal resistance43 N-channel21 Pb-free lead plating; RoHS compliant Halogen-fr

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