BSC155N06ND Todos los transistores

 

BSC155N06ND MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSC155N06ND
   Código: 155N06ND
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 21 nC
   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0155 Ohm
   Paquete / Cubierta: TDSON-8-4

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BSC155N06ND Datasheet (PDF)

 ..1. Size:1163K  infineon
bsc155n06nd.pdf

BSC155N06ND
BSC155N06ND

BSC155N06NDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel,Normal Level Fast switching MOSFETs 175C operating temperature Green product (RoHS compliant)182 7 100% Avalanche tested3 654 Optimized technology for drives applications Halogen-free according to IEC61249-2-21 Superior thermal resis

 9.1. Size:317K  infineon
bsc150n03ld.pdf

BSC155N06ND
BSC155N06ND

BSC150N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 15mDS(on),max Fast switching MOSFETs for SMPSI 20 ADPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 9.2. Size:589K  infineon
bsc150n03ld .pdf

BSC155N06ND
BSC155N06ND

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 9.3. Size:319K  infineon
bsc150n03ldg.pdf

BSC155N06ND
BSC155N06ND

BSC150N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 15mDS(on),max Fast switching MOSFETs for SMPSI 20 ADPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 9.4. Size:665K  infineon
bsc152n10nsf8.pdf

BSC155N06ND
BSC155N06ND

% ! !% D #:A0 DQ ' 381>>5?B=1

 9.5. Size:666K  infineon
bsc159n10lsf9 bsc159n10lsfg.pdf

BSC155N06ND
BSC155N06ND

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