BSZ010NE2LS5 Todos los transistores

BSZ010NE2LS5 MOSFET TSDSON-8 FL OptiMOSTM5 Power-Transistor, 25 V (enlarged source interconnection) Features Optimized for OR-ing application Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Fully qual

n-Channel Power MOSFET OptiMOS BSZ019N03LS Data Sheet 2.1, 2011-09-21 Final Industrial & Multimarket OptiMOS Power-MOSFET BSZ019N03LS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS

BSZ011NE2LS5I MOSFET TSDSON-8 FL OptiMOSTM5 Power-Transistor, 25 V (enlarged source interconnection) Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resistance R @ V =4.5V DS(on) GS 100% avalanche tested N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Pr

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSZ014NE2LS5IF Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 25 V BSZ014NE2LS5IF TSDSON-8 FL 1 Description (enlarged source interconnection) Features Optimized for synchronous rectification Monolithic integrated Schottky like diode Ve

BSZ018NE2LS For OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 1.8 mW Very Low FOMQOSS for High Frequency SMPS VGS=4.5 V 2.4 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) PG-TSDSON-8 Very low on-resistance R @ V =4.5 V

BSZ018NE2LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter RDS(on),max 1.8 mW Monolithic integrated Schottky like diode A ID 40 Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 23 nC 100% avalanche tested 36 nC QG(0V..10V) N-channel PG-TSDSON-8 (fused leads) Qualified according to

BSZ018N04LS6 MOSFET TSDSON-8 FL OptiMOSTM 6 Power-Transistor, 40 V (enlarged source interconnection) Features Optimized for synchronous rectification Very low on-resistance R DS(on) 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 175 C rated Product validatio