BSZ013NE2LS5I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSZ013NE2LS5I
   Código: 13NE25I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 37 nC
   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 1200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
   Paquete / Cubierta: TSDSON-8

Búsqueda de reemplazo de MOSFET BSZ013NE2LS5I

BSZ013NE2LS5I Datasheet (PDF)

..1. Size:1646K infineon
bsz013ne2ls5i.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ013NE2LS5IData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ013NE2LS5ITSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode

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bsz011ne2ls5i.pdf

BSZ011NE2LS5IMOSFETTSDSON-8 FLOptiMOSTM5 Power-Transistor, 25 V(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resistance R @ V =4.5VDS(on) GS 100% avalanche tested N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Pr

9.3. Size:1609K infineon
bsz014ne2ls5if.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ014NE2LS5IFData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ014NE2LS5IFTSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for synchronous rectification Monolithic integrated Schottky like diode Ve

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bsz018ne2ls.pdf

BSZ018NE2LSFor OptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 1.8 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 2.4 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on)PG-TSDSON-8 Very low on-resistance R @ V =4.5 V

9.5. Size:1215K infineon
bsz010ne2ls5.pdf

BSZ010NE2LS5MOSFETTSDSON-8 FLOptiMOSTM5 Power-Transistor, 25 V(enlarged source interconnection)Features Optimized for OR-ing application Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qual

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bsz018ne2lsi.pdf

BSZ018NE2LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 1.8 mW Monolithic integrated Schottky like diodeA ID 40 Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 23 nC 100% avalanche tested36 nC QG(0V..10V) N-channelPG-TSDSON-8 (fused leads) Qualified according to

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bsz018n04ls6.pdf

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bsz017ne2ls5i.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ017NE2LS5IData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ017NE2LS5ITSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode

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