BSZ033NE2LS5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSZ033NE2LS5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 390 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Paquete / Cubierta: TSDSON-8
BSZ033NE2LS5 Datasheet (PDF)
bsz033ne2ls5.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Very Low FOM for High Frequency SMPSQOSS
bsz036ne2ls.pdf

For BSZ036NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 3.6 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 5.1 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GSPG-TS
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BSZ035N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 3.5 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 4.3 100% avalanche testedID 40 A PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FO
bsz039n06ns.pdf

BSZ039N06NSMOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. Rec 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Higher solder joint reliability due to enlarged source interc
Otros transistores... BSZ010NE2LS5 , BSZ011NE2LS5I , BSZ013NE2LS5I , BSZ017NE2LS5I , BSZ018N04LS6 , BSZ021N04LS6 , BSZ024N04LS6 , BSZ031NE2LS5 , P55NF06 , BSZ037N06LS5 , BSZ039N06NS , BSZ040N06LS5 , BSZ0500NSI , BSZ0589NS , BSZ063N04LS6 , BSZ065N06LS5 , BSZ0703LS .



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