IMW120R350M1H Todos los transistores

 

IMW120R350M1H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IMW120R350M1H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 23 V

|Id|ⓘ - Corriente continua de drenaje: 4.7 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 0.7 nS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.468 Ohm

Encapsulados: TO247

 Búsqueda de reemplazo de IMW120R350M1H MOSFET

- Selecciónⓘ de transistores por parámetros

 

IMW120R350M1H datasheet

 ..1. Size:1218K  infineon
 imw120r350m1h.pdf pdf_icon

IMW120R350M1H

IMW120R350M1H IMW120R350M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 7.1. Size:1124K  infineon
 imw120r060m1h.pdf pdf_icon

IMW120R350M1H

IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 7.2. Size:1125K  infineon
 imw120r090m1h.pdf pdf_icon

IMW120R350M1H

IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 7.3. Size:1365K  infineon
 aimw120r045m1.pdf pdf_icon

IMW120R350M1H

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c

MOSTRAR MÁS

Otros transistores... IAUC120N04S6N009 , IAUS180N04S4N015 , IMW120R030M1H , IMW120R045M1 , IMW120R060M1H , IMW120R090M1H , IMW120R140M1H , IMW120R220M1H , AON7410 , IMW65R027M1H , IMW65R048M1H , IMW65R072M1H , IMW65R107M1H , IMZ120R030M1H , IMZ120R060M1H , IMZ120R090M1H , IMZ120R140M1H .

History: 2SJ605

 

 

 

 

↑ Back to Top
.