IPA040N06NM5S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA040N06NM5S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 72 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 670 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: TO220FP
Búsqueda de reemplazo de IPA040N06NM5S MOSFET
IPA040N06NM5S Datasheet (PDF)
ipa040n06nm5s.pdf
IPA040N06NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 60 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified
ipa040n06n.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 60 VIPA040N06NData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 60 VIPA040N06NTO-220-FP1 DescriptionFeatures Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel
ipa040n06n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA040N06NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS
ipa040n08nm5s.pdf
IPA040N08NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 80 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified
Otros transistores... IMZ120R090M1H , IMZ120R140M1H , IMZ120R220M1H , IMZ120R350M1H , IMZA65R027M1H , IMZA65R048M1H , IMZA65R072M1H , IPA029N06NM5S , 4N60 , IPA040N08NM5S , IPA050N10NM5S , IPA052N08NM5S , IPA060N06NM5S , IPA083N10NM5S , IPA126N10NM3S , IPA320N20NM3S , IPA600N25NM3S .
History: LNG5N65B | FDMS7572S | 2N65L-AA3-R | VS6880AT | IMZA65R048M1H | LNG06R310
History: LNG5N65B | FDMS7572S | 2N65L-AA3-R | VS6880AT | IMZA65R048M1H | LNG06R310
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SLI40N26C | SLB40N26C | RM150N100HD | HYG043N10NS2B | HYG043N10NS2P | HCA60R070F | FTP16N06A | AGM615MNA | AGM615MN | AGM615D | AGM614MNA | AGM614MN | AGM614MBP-M1 | AGM614MBP | AGM614D | AGM614A-G
Popular searches
2sb549 | 5n50 mosfet equivalent | a1016 transistor | a1693 transistor | a933 datasheet | c535 transistor | irf3205 reemplazo | mpsu06

