IPA60R060C7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPA60R060C7
   Código: 60C7060
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 68 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 54 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO220FP

Búsqueda de reemplazo de MOSFET IPA60R060C7

IPA60R060C7 Datasheet (PDF)

..1. Size:1191K infineon
ipa60r060c7.pdf

IPA60R060C7MOSFETPG-TO 220 FP600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology ever w

5.1. Size:1126K infineon
ipa60r060p7.pdf

IPA60R060P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

5.2. Size:279K inchange semiconductor
ipa60r060p7.pdf

isc N-Channel MOSFET Transistor IPA60R060P7FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

7.1. Size:1150K infineon
ipa60r099c7.pdf

IPA60R099C7MOSFETPG-TO 220 FP600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology ever w

7.2. Size:1120K infineon
ipa60r099p7.pdf

IPA60R099P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

7.3. Size:2269K infineon
ipa60r099p6 ipp60r099p6 ipw60r099p6 ipw60r099p6 ipp60r099p6 ipa60r099p6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R099P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R099P6, IPP60R099P6, IPA60R099P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

7.4. Size:1385K infineon
ipa60r099c6.pdf

MOSFET+ =L9D - PA

7.5. Size:1122K infineon
ipa60r080p7.pdf

IPA60R080P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

7.6. Size:2087K infineon
ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

7.7. Size:223K inchange semiconductor
ipa60r099c6.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R099C6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

7.8. Size:223K inchange semiconductor
ipa60r099p6.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R099P6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STP20NM50

Liste

Recientemente añadidas las descripciónes de los transistores: