IPA60R210CFD7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA60R210CFD7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 16.5 nS
Cossⓘ - Capacitancia de salida: 18 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
Encapsulados: TO220FP
Búsqueda de reemplazo de IPA60R210CFD7 MOSFET
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IPA60R210CFD7 datasheet
..1. Size:1095K infineon
ipa60r210cfd7.pdf 
IPA60R210CFD7 MOSFET PG-TO 220 FP 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such
7.1. Size:1140K infineon
ipa60r280cfd7.pdf
IPA60R280CFD7 MOSFET PG-TO 220 FP 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such
7.2. Size:2632K infineon
ipb60r230p6 ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R230P6, IPB60R230P6, IPP60R230P6, IPA60R230P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.3. Size:2865K infineon
ipa60r280p6 ipp60r280p6 ipw60r280p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R280P6, IPP60R280P6, IPA60R280P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.4. Size:1975K infineon
ipa60r280e6 2.0.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)
7.5. Size:2886K infineon
ipa60r230p6 ipp60r230p6 ipw60r230p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R230P6, IPP60R230P6, IPA60R230P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.6. Size:1012K infineon
ipp60r280e6 ipa60r280e6 ipw60r280e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V 600V CoolMOS E6 Power Transistor IPx60R280E6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6 IPW60R280E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) pri
7.8. Size:546K infineon
ipa60r299cp.pdf
IPA60R299CP C IMOS $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 V )DL HI ;>I / xQg ON Y 0.299 DS(on) max j V 2 AIG6 ADL IN V . J6A>;> 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound
7.9. Size:3109K infineon
ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R230P6, IPB60R230P6, IPP60R230P6, IPA60R230P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.10. Size:1097K infineon
ipa60r280p7s.pdf
IPA60R280P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE
7.11. Size:1105K infineon
ipa60r280p7.pdf
IPA60R280P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET
7.12. Size:2621K infineon
ipw60r280p6 ipb60r280p6 ipp60r280p6 ipa60r280p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R280P6, IPB60R280P6, IPP60R280P6, IPA60R280P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.13. Size:555K infineon
ipa60r250cp.pdf
IPA60R250CP C IMOS $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 V )DL HI ;>I / xQg ON Y 0.250 W DS(on) max j V 2 AIG6 ADL IN -$ 1, #- V . J6A>;> 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound ;;
7.14. Size:1587K infineon
ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according
7.15. Size:223K inchange semiconductor
ipa60r280p6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280P6 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
7.16. Size:201K inchange semiconductor
ipa60r280cfd7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280CFD7 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATI
7.17. Size:202K inchange semiconductor
ipa60r280c6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280C6 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
7.18. Size:201K inchange semiconductor
ipa60r299cp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R299CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
7.19. Size:201K inchange semiconductor
ipa60r280p7.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R280P7 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
7.20. Size:245K inchange semiconductor
ipa60r280e6.pdf
isc N-Channel MOSFET Transistor IPA60R280E6 IIPA60R280E6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL
7.21. Size:223K inchange semiconductor
ipa60r230p6.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R230P6 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
7.22. Size:201K inchange semiconductor
ipa60r250cp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R250CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
Otros transistores... IPA60R060P7, IPA60R080P7, IPA60R099C7, IPA60R099P7, IPA60R125CFD7, IPA60R145CFD7, IPA60R160P7, IPA60R180P7, 75N75, IPA60R280P7S, IPA60R360CFD7, IPA60R600P7S, IPA70R450P7S, IPA70R600P7S, IPA70R750P7S, IPA70R900P7S, IPA80R1K2P7
