IPA60R360CFD7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPA60R360CFD7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 23 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 11 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm

Encapsulados: TO220FP

 Búsqueda de reemplazo de IPA60R360CFD7 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPA60R360CFD7 datasheet

 ..1. Size:1105K  infineon
 ipa60r360cfd7.pdf pdf_icon

IPA60R360CFD7

IPA60R360CFD7 MOSFET PG-TO 220 FP 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such

 5.1. Size:1082K  1
 ipa60r360p7.pdf pdf_icon

IPA60R360CFD7

IPA60R360P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MO

 5.2. Size:1103K  infineon
 ipa60r360p7.pdf pdf_icon

IPA60R360CFD7

IPA60R360P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET

 5.3. Size:894K  infineon
 ipa60r360p7s.pdf pdf_icon

IPA60R360CFD7

IPA60R360P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ M

MOSTRAR MÁS

Otros transistores... IPA60R099C7, IPA60R099P7, IPA60R125CFD7, IPA60R145CFD7, IPA60R160P7, IPA60R180P7, IPA60R210CFD7, IPA60R280P7S, IRFB31N20D, IPA60R600P7S, IPA70R450P7S, IPA70R600P7S, IPA70R750P7S, IPA70R900P7S, IPA80R1K2P7, IPA80R1K4P7, IPA80R280P7