IPA70R750P7S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA70R750P7S 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 21.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 6.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 5.1 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Encapsulados: TO220FP
📄📄 Copiar
Búsqueda de reemplazo de IPA70R750P7S MOSFET
- Selecciónⓘ de transistores por parámetros
IPA70R750P7S datasheet
ipa70r750p7s.pdf
IPA70R750P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV,
ipa70r600p7s.pdf
IPA70R600P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV,
ipa70r360p7s 70s360p7.pdf
IPA70R360P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,
ipa70r900p7s.pdf
IPA70R900P7S MOSFET PG-TO 220 FP 700V CoolMOS P7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV,
Otros transistores... IPA60R160P7, IPA60R180P7, IPA60R210CFD7, IPA60R280P7S, IPA60R360CFD7, IPA60R600P7S, IPA70R450P7S, IPA70R600P7S, IRFZ24N, IPA70R900P7S, IPA80R1K2P7, IPA80R1K4P7, IPA80R280P7, IPA80R360P7, IPA80R450P7, IPA80R600P7, IPA80R750P7
Parámetros del MOSFET. Cómo se afectan entre sí.
History: SI7946ADP | UTT60P03
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D | MSQ30P15 | MSQ30P07D | MSQ100N03D | MSHM60P14 | MSHM40N085 | MSHM30N46
Popular searches
j377 transistor datasheet | svt20240nt | tip41c replacement | b772m transistor | mj15003g datasheet | irfp460n datasheet | mj15025g | ksa1381 replacement
