IPA80R600P7 Todos los transistores

 

IPA80R600P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPA80R600P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 11 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO220FP

 Búsqueda de reemplazo de MOSFET IPA80R600P7

 

IPA80R600P7 Datasheet (PDF)

 ..1. Size:1137K  infineon
ipa80r600p7.pdf

IPA80R600P7
IPA80R600P7

IPA80R600P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

 7.1. Size:1067K  infineon
ipa80r650ce.pdf

IPA80R600P7
IPA80R600P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R650CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R650CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

 7.2. Size:201K  inchange semiconductor
ipa80r650ce.pdf

IPA80R600P7
IPA80R600P7

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R650CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.1. Size:1052K  infineon
ipa80r460ce.pdf

IPA80R600P7
IPA80R600P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R460CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R460CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

 8.2. Size:1179K  infineon
ipa80r1k2p7.pdf

IPA80R600P7
IPA80R600P7

IPA80R1K2P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

 8.3. Size:1042K  infineon
ipa80r1k0ce.pdf

IPA80R600P7
IPA80R600P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R1K0CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R1K0CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

 8.4. Size:1153K  infineon
ipa80r900p7.pdf

IPA80R600P7
IPA80R600P7

IPA80R900P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

 8.5. Size:1047K  infineon
ipa80r1k4ce.pdf

IPA80R600P7
IPA80R600P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R1K4CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R1K4CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

 8.6. Size:1137K  infineon
ipa80r750p7.pdf

IPA80R600P7
IPA80R600P7

IPA80R750P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

 8.7. Size:1151K  infineon
ipa80r280p7.pdf

IPA80R600P7
IPA80R600P7

IPA80R280P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

 8.8. Size:1167K  infineon
ipa80r360p7.pdf

IPA80R600P7
IPA80R600P7

IPA80R360P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

 8.9. Size:1182K  infineon
ipa80r1k4p7.pdf

IPA80R600P7
IPA80R600P7

IPA80R1K4P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

 8.10. Size:1045K  infineon
ipa80r310ce.pdf

IPA80R600P7
IPA80R600P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R310CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R310CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

 8.11. Size:1123K  infineon
ipa80r450p7.pdf

IPA80R600P7
IPA80R600P7

IPA80R450P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

 8.12. Size:201K  inchange semiconductor
ipa80r460ce.pdf

IPA80R600P7
IPA80R600P7

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R460CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.13. Size:201K  inchange semiconductor
ipa80r1k0ce.pdf

IPA80R600P7
IPA80R600P7

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R1K0CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.14. Size:201K  inchange semiconductor
ipa80r1k4ce.pdf

IPA80R600P7
IPA80R600P7

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R1K4CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.15. Size:201K  inchange semiconductor
ipa80r310ce.pdf

IPA80R600P7
IPA80R600P7

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA80R310CEFEATURESWith TO-220F packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

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