IPAN80R450P7 Todos los transistores

 

IPAN80R450P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPAN80R450P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 14 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO220FP
 

 Búsqueda de reemplazo de IPAN80R450P7 MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPAN80R450P7 Datasheet (PDF)

 ..1. Size:937K  infineon
ipan80r450p7.pdf pdf_icon

IPAN80R450P7

IPAN80R450P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 7.1. Size:957K  infineon
ipan80r280p7.pdf pdf_icon

IPAN80R450P7

IPAN80R280P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

 7.2. Size:965K  infineon
ipan80r360p7.pdf pdf_icon

IPAN80R450P7

IPAN80R360P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and C

Otros transistores... IPAN60R600P7S , IPAN70R360P7S , IPAN70R450P7S , IPAN70R600P7S , IPAN70R750P7S , IPAN70R900P7S , IPAN80R280P7 , IPAN80R360P7 , IRFP460 , IPAW60R180P7S , IPAW60R190CE , IPAW60R280CE , IPAW60R280P7S , IPAW60R380CE , IPAW60R600CE , IPAW60R600P7S , IPAW70R600CE .

History: IXFH18N60P | HY150N075T | DAMH160N200 | MSK7804 | CS4N65A3HD | NVD3055-150 | LND150K1

 

 
Back to Top

 


 
.