IPB024N10N5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Búsqueda de reemplazo de MOSFET IPB024N10N5

IPB024N10N5 Datasheet (PDF)

0.1. ipb024n10n5.pdf Size:1099K _infineon

IPB024N10N5MOSFETD-PAK 7pinOptiMOS 5 Power-Transistor, 100 VFeatures Ideal for high frequency switching and sync. rec.tab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level1 100% avalanche tested Pb-free plating; RoHS compliant7 Qualified according to JEDEC1) for target applications H

7.1. ipb024n08n5.pdf Size:1126K _infineon

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB024N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB024N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance

 9.1. ipb025n10n3g ipb025n10n3g3.pdf Size:665K _infineon

IPB025N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D P ' 381>>5?A=1

9.2. ipb020n08n5.pdf Size:1131K _infineon

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VIPB020N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VIPB020N08N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance

 9.3. ipp023n04n-g ipb023n04n-g.pdf Size:245K _infineon

Type IPP023N04N GIPB023N04N GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS MOSFET for ORing and Uninterruptible Power Supply R 2.3mDS(on),max Qualified according to JEDEC1) for target applicationsI 90 AD N-channel Normal level Ultra-low on-resistance RDS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Hal

9.4. ipb020n10n5lf.pdf Size:1011K _infineon

IPB020N10N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 100 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain

 9.5. ipb020ne7n3 ipb020ne7n3g.pdf Size:530K _infineon

# ! ! TM #:A0 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35

9.6. ipb029n06n3ge8187.pdf Size:996K _infineon

pe IPB029N06N3 G IPI032N06N3 GIPP032N06N3 G 3 Power-TransistorProduct SummaryV Features D R m Q #4513I CG9D389>7 1>4 CI>3 B53 , ?> =1H ,& I 1 Q ( @D9=9J54 D538>?F5BD5BC DQ H35

9.7. ipb022n04l.pdf Size:680K _infineon

TypeIPB022N04L G 3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 2.2mWDS(on),max Optimized technology for DC/DC convertersI 90 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 100% Avalanc

9.8. ipb025n08n3.pdf Size:553K _infineon

IPB025N08N3 GProduct Summary 3 Power-TransistorV 80 VDSFeaturesR 2.5m DS(on) maxQ ' 381>>5?B=1

9.9. ipb023n06n3.pdf Size:671K _infineon

pe IPB023N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 14 DQ H35

9.10. ipb025n08n3g.pdf Size:841K _infineon

IPB025N08N3 GMOSFETDPAKOptiMOS3 Power-Transistor, 80 VFeatures N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectificat

9.11. ipb020n04n ipb020n04ng.pdf Size:516K _infineon

pe # ! ! #:A0A=:2?DQ "2=@86? 7B66 244@B5:?8 D@ # Type Package Marking#)

9.12. ipb020n10n5.pdf Size:1169K _infineon

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPB020N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPB020N10N5DPAK1 DescriptionFeatures N-channel, normal level Optimized for FOMOSS Very low on-resistance RDS(on) 175 C operating temperature

9.13. ipp024n06n3g ipb021n06n3g ipi024n06n3g.pdf Size:999K _infineon

pe IPB021N06N3 G IPI024N06N3 GIPP024N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 1 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI 1 DQ H35

9.14. ipb027n10n3g.pdf Size:531K _infineon

IPB027N10N3 G 3 Power-TransistorProduct SummaryFeaturesV 1 D Q ' 381>>5?B=1

9.15. ipb026n06n.pdf Size:563K _infineon

TypeIPB026N06NOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 2.6 mW 100% avalanche testedID 100 A Superior thermal resistanceQoss 65 nC N-channel, normal level Qualified according to JEDEC1) for target applications Qg(0V..10V) 56 nC Pb-free lead plating; RoHS compliant Haloge

9.16. ipb023n04n ipp023n04ng ipb023n04ng.pdf Size:583K _infineon

pe IPP023N04N GIPB023N04N G 3 Power-TransistorProduct SummaryFeaturesV 4 D Q &( , - 7@B ( + :?8 2?5 . ?:?D6BBEAD:3=6 )@G6B ,EAA=I R m , @? >2H 1)Q * E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CI DQ ' 492??6=Q '@B>2= =6F6=Q . =DB2 =@G @? B6C:CD2?46 RD n)Q F2=2?496 D6CD65Q )3 7B66 A=2D:?8 + @", 4@>A=:2?DQ "2=@86? 7B66 244@B5:?8 D@ # Type #) ' '

9.17. ipb021n06n3g ipi024n06n3g ipp024n06n3g.pdf Size:483K _infineon

Type IPB021N06N3 G IPI024N06N3 GIPP024N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 2.1mDS(on),max (SMD) Optimized technology for DC/DC convertersI 120 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanch

9.18. ipb029n06n3g ipi032n06n3g ipp032n06n3g.pdf Size:483K _infineon

Type IPB029N06N3 G IPI032N06N3 GIPP032N06N3 GOptiMOS3 Power-TransistorProduct SummaryV 60 VFeatures DSR 2.9m Ideal for high frequency switching and sync. rec. DS(on),max (SMD)I 120 A Optimized technology for DC/DC converters D Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche t

9.19. ipb027n10n5.pdf Size:1134K _infineon

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 100 VIPB027N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 100 VIPB027N10N5DPAK1 DescriptionFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resista

9.20. ipb021n06n3g.pdf Size:228K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IPB021N06N3GFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

9.21. ipb020n10n5lf.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IPB020N10N5LFFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

9.22. ipb029n06n3.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IPB029N06N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

9.23. ipb020n10n5.pdf Size:204K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB020N10N5FEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery low on-resistenceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

9.24. ipb027n10n3.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IPB027N10N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

9.25. ipb026n06n.pdf Size:257K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPB026N06NFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

9.26. ipb023n04n.pdf Size:258K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPB023N04NFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

9.27. ipb027n10n5.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IPB027N10N5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Liste

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