IPB110P06LM Todos los transistores

 

IPB110P06LM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB110P06LM

Código: 110P06LM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente |Vds|: 60 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 100 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 2 V

Carga de compuerta (Qg): 281 nC

Tiempo de elevación (tr): 33 nS

Conductancia de drenaje-sustrato (Cd): 1200 pF

Resistencia drenaje-fuente RDS(on): 0.011 Ohm

Empaquetado / Estuche: TO263

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IPB110P06LM Datasheet (PDF)

0.1. ipb110p06lm.pdf Size:933K _infineon

IPB110P06LM
IPB110P06LM

IPB110P06LMMOSFETDPAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Logic Level Enhancement mode Pb-free lead plating; RoHS compliant1 Halogen-free according to IEC61249-2-213Product validationFully qualified according to JEDEC for Industrial ApplicationsDraint

8.1. ipb110n06lg.pdf Size:334K _infineon

IPB110P06LM
IPB110P06LM

IPB110N06L G IPP110N06L GOptiMOS Power-TransistorProduct SummaryFeaturesV 60 VDS For fast switching converters and sync. rectificationR 11mDS(on),max SMD version N-channel enhancement - logic levelI 78 AD 175 C operating temperature Avalanche rated Pb-free lead plating, RoHS compliantType IPB110N06L G IPP110N06L GType Package MarkingIPB1

8.2. ipb110n06lg ipp110n06lg.pdf Size:740K _infineon

IPB110P06LM
IPB110P06LM

IPB110N06L G IPP110N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 11 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

 8.3. ipb110n20n3lf.pdf Size:991K _infineon

IPB110P06LM
IPB110P06LM

IPB110N20N3LFMOSFETDPAKOptiMOSTM 3 Linear FET, 200 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain

8.4. ipb110n20n3lf.pdf Size:258K _inchange_semiconductor

IPB110P06LM
IPB110P06LM

Isc N-Channel MOSFET Transistor IPB110N20N3LFFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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