IAUC120N04S6L012 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IAUC120N04S6L012
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 115 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 1022 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00121 Ohm
Encapsulados: TDSON-8
Búsqueda de reemplazo de IAUC120N04S6L012 MOSFET
- Selecciónⓘ de transistores por parámetros
IAUC120N04S6L012 datasheet
iauc120n04s6l008.pdf
IAUC120N04S6L008 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 0.8 m ID 120 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche test
iauc120n04s6l012.pdf
IAUC120N04S6L012 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.2 mW ID 120 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested
iauc120n04s6l009.pdf
IAUC120N04S6L009 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 0.9 mW ID 120 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested
Otros transistores... IAUC100N04S6L020 , IAUC100N04S6L025 , IAUC100N04S6N015 , IAUC100N04S6N022 , IAUC100N04S6N028 , IAUC100N08S5N043 , IAUC100N10S5L040 , IAUC120N04S6L009 , 2N60 , IAUC120N04S6N010 , IAUC120N04S6N013 , IAUC24N10S5L300 , IAUC28N08S5L230 , IAUC60N04S6L039 , IAUC60N04S6N044 , IAUC70N08S5N074 , IAUC80N04S6L032 .
History: HD830U | SUD50P04-13L | SK50N06A | BF256B | MEE7298-G
History: HD830U | SUD50P04-13L | SK50N06A | BF256B | MEE7298-G
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
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